Room-temperature method for minimizing light-induced degradation in crystalline silicon

نویسندگان

  • J. Lindroos
  • M. Yli-Koski
  • H. Savin
چکیده

All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not be offered, whether for sale or otherwise to anyone who is not an authorised user.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Native point defects and dangling bonds in -Al2O3

Related Articles Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study Appl. Phys. Lett. 102, 033103 (2013) Interstitial Ti for intermediate band formation in Ti-supersaturated silicon J. Appl. Phys. 112, 113514 (2012) Room-temperature method for minimizing light-induced degradation in crystalline silicon Appl. Phys. Le...

متن کامل

Light Induced Degradation in Manufacturable Multi-crystalline Silicon Solar Cells

Traditional Czochralski grown Si solar cells are known to suffer from light induced degradation (LID) which adversely affects the minority carrier lifetime. Multi-crystalline Si has also been shown to show a similar degradation/recovery cycle after a phosphorus gettering step. In this paper, promising ribbon and cast multi-crystalline Si are examined for light induced degradation. High oxygen m...

متن کامل

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

متن کامل

Temperature-dependency analysis and correction methods of in situ power-loss estimation for crystalline silicon modules undergoing potential-induced degradation stress testing

We propose a method for in situ characterization of the photovoltaic module power at standard test conditions, using superposition of the dark current–voltage (I–V) curve measured at the elevated stress temperature, during potential-induced degradation (PID) testing. PID chamber studies were performed on several crystalline silicon module designs to determine the extent to which the temperature...

متن کامل

Hydrogen induced optically-active defects in silicon photonic nanocavities.

We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths:...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015